IIT Delhi Recruitment 2026 | Apply Online for Research Associate Positions under DRDO Project
The Industrial Research & Development Unit (IRD) at the Indian Institute of Technology (IIT) Delhi has officially released a recruitment notification for temporary Research Associate positions under a prestigious defence research project funded by the Defence Research & Development Organisation (DRDO), Ministry of Defence.
The project will be conducted at the Centre for Applied Research in Electronics (CARE), IIT Delhi and focuses on advanced semiconductor and THz device technologies.
Applications are invited from highly motivated Indian nationals with expertise in Electronics, Physics, Semiconductor Devices, Nanoelectronics, and related research areas.
Selected candidates will work on cutting-edge research involving InP-based HEMT devices, semiconductor fabrication, device simulation, nanotechnology, and advanced electronic systems.
Recruitment Overview
| Particulars | Details |
|---|---|
| Institution | Indian Institute of Technology (IIT) Delhi |
| Department / Centre | Centre for Applied Research in Electronics (CARE) |
| Funding Agency | DRDO, Ministry of Defence |
| Advertisement Number | IIT/IRD/128/2026 |
| Project Title | Design and Measurement of InP-based HEMT Devices for THz Applications |
| Principal Investigator | Prof. Rahul Mishra |
| Employment Type | Temporary / Contractual |
| Project Duration | Up to 28 March 2029 |
| Application Mode | Email Application |
| Official Website | https://home.iitd.ac.in |
Research Associate (a)
| Particulars | Details |
| Number of Posts | 01 |
| Fellowship | ₹58,000 Per Month + 27% HRA |
| Qualification | PhD in Electronics, Physics, or Related Area |
| Required Experience | Semiconductor / Nanoelectronic Device Design, Fabrication, or Characterization |
Preferred Skills:
• InP / GaN / GaAs HEMTs
• TCAD Tools
• Thin Film Deposition
• Nanofabrication
Role Responsibilities:
• Lead Research Activities
• Coordinate Device Design & Fabrication
• Perform Data Analysis & Reporting
• Collaborate with Research Teams
Research Associate (b)
| Particulars | Details |
| Number of Posts | 01 |
| Fellowship | ₹58,000 Per Month + 27% HRA |
| Qualification | First Class M.Tech/MS with 3 Years Research Experience OR PhD |
| Required Area | Semiconductor Device Physics & Simulation |
Preferred Skills:
• TCAD Simulation Tools
• Silvaco / Synopsys Sentaurus
• III-V Semiconductor Devices
• InP / GaN / GaAs HEMTs
Role Responsibilities:
• TCAD-based Device Design
• Optimization of InP HEMT Structures
• Semiconductor Simulation & Modelling
Important Note
• Posts may be downgraded if suitable candidates are unavailable.
• SC/ST candidates will receive 5% relaxation in marks as per norms.
Important Dates
| Event | Date |
| Notification Release Date | 27 May 2026 |
| Last Date to Apply | 10 June 2026 (5:00 PM) |
Selection Process
The recruitment process includes:
Shortlisting
• Based on Academic Qualifications & Research Experience
Interview
• Shortlisted candidates will be called for Online Interview
Shortlist Information
• Shortlisted candidates list will be displayed on the official IRD portal
Shortlist Portal:
http://ird.iitd.ac.in/shortlisted
How to Apply
Interested candidates must follow the steps below:
- Download Form No. IRD/REC-4 from the IIT Delhi IRD portal.
- Fill out the application form carefully.
- Attach educational certificates, research experience proofs, and supporting documents.
- Email the completed application form to the Principal Investigator.
Application Email:ramis@care.iitd.ac.in
Important:
Mention “Advertisement No. IIT/IRD/128/2026” in the email subject line.
Official Links
IIT Delhi Official Website:https://home.iitd.ac.in
IRD Recruitment Portal:http://ird.iitd.ac.in/rec
Source: https://ird.iitd.ac.in/api/uploadsProjectPositions/project_position_1779867132774_ru2227g.pdf
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